GENERATION-RECOMBINATION CHARACTERISTIC BEHAVIOR OF SILICON DIODES

被引：34

作者：

NUSSBAUM, A ^{[1
]}

机构：

[1] UNIV MINNESOTA,ELECT ENGN DEPT,MINNEAPOLIS,MN 55455

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 19卷 / 02期

关键词：

D O I：

10.1002/pssa.2210190207

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：441 / 450

页数：10

共 19 条

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[10] MODIFIED THEORY OF CURRENT/VOLTAGE RELATION IN SILICON P-N JUNCTIONS [J].

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