SHALLOW SILICIDE-TO-SILICON CONTACTS - THE CASE OF AMORPHOUS-PD80SI20-TO-SILICON

被引：8

作者：

KRITZINGER, S ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.91826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：205 / 208

页数：4

共 9 条

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ANDREWS, JM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 972 - 984
[2] SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS
MAYER, JW
LAU, SS
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5855 - 5859
[3] NICOLLIAN EH, 1978, THIN FILMS INTERDIFF, pCH13
[4] MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICON
OHDOMARI, I
KUAN, TS
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7020 - 7029
[5] SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDE
OHDOMARI, I
TU, KN
DHEURLE, FM
KUAN, TS
PETERSSON, S
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1028 - 1030
[6] CONTACT REACTION BETWEEN SI AND PD-W ALLOY-FILMS
OLOWOLAFE, JO
TU, KN
ANGILELLO, J
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6316 - 6320
[7] RIDEOUT L, 1978, THIN SOLID FILMS, V48, P261
[8] SHALLOW SILICIDE CONTACT
TU, KN
HAMMER, WN
OLOWOLAFE, JO
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1663 - 1668
[9] TU KN, 1978, 9TH P INT C EL MICR, V1, P138