CHARGE COLLECTION IN SILICON DETECTORS FOR STRONGLY IONIZING PARTICLES

被引：110

作者：

SEIBT, W ^{[1
]}

SUNDSTRO.KE ^{[1
]}

TOVE, PA ^{[1
]}

机构：

[1] UNIV UPPSALA,INST TECHNOL,ELECTR DEPT,UPPSALA,SWEDEN

来源：

NUCLEAR INSTRUMENTS & METHODS | 1973年 / 113卷 / 03期

关键词：

D O I：

10.1016/0029-554X(73)90496-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：317 / 324

页数：8

共 20 条

[1] INFLUENCE OF CARRIER DIFFUSION EFFECTS ON WINDOW THICKNESS OF SEMICONDUCTOR DETECTORS
CAYWOOD, JM
MEAD, CA
MAYER, JW
[J]. NUCLEAR INSTRUMENTS & METHODS, 1970, 79 (02): : 329 - &
[2] DEARNALEY G, 1963, SEMICONDUCTOR RADIAT, pCH2
[3] JANNEY R, 1969, UUIP674
[4] KRULISCH AH, 1967, IEEE T NUCL SCI, VNS14, P58
[5] THEORY OF TRANSIENT SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS IN PRESENCE OF TRAPPING
MANY, A
RAKAVY, G
[J]. PHYSICAL REVIEW, 1962, 126 (06): : 1980 - &
[6] MEYER H, 1966, IEEE T NUCL SCI, VNS13, P180
[7] DIE BEWEGLICHKEIT HEISSER ELEKTRONEN UND IHR EINFLUSS AUF DIE ANSTIEGSZEIT DER IMPULSE VON HALBLEITERZAHLERN AUS N-SILIZIUM
MEYER, O
LANGMANN, HJ
[J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 34 (01): : 77 - +
[8] Miller G.L., 1960, IRE T NUCL SCI, V7, P185, DOI DOI 10.1109/TNS2.1960.4315762
[9] UNIPOLAR SPACE-CHARGE-LIMITED CURRENT IN SOLIDS WITH NONUNIFORM SPACIAL DISTRIBUTION OF SHALLOW TRAPS
NICOLET, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4224 - &
[10] PLASMA TIME IN SEMICONDUCTOR DETECTORS
QUARANTA, AA
TARONI, A
ZANARINI, G
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (03) : 373 - +