A MODEL OF CONDUCTION IN POLYCRYSTALLINE SILICON FILMS

[1] Ada-Hanifi M., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P353

[2] ADAHANIFI M, 1985, THESIS MONTPELLIER

[3] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570

[4] BOREL G, 1984, THESIS GRENOBLE

[5] BRONIATOWSKI A, 1982, J PHYS PARIS, P63

[6] INTERPRETATION OF THERMOELECTRIC-POWER IN SILICON-ON-SAPPHIRE FILMS BY MEANS OF A LONG-RANGE POTENTIAL-FLUCTUATION MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 325 - 329

[7] DUSSEAU JM, 1980, THESIS MONTPELLIER

[8] ON THE HALL-EFFECT IN POLYCRYSTALLINE SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 1080 - 1082

[9] ELECTRON-TUNNELING IN HEAVILY IN-DOPED POLYCRYSTALLINE CDS FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1738 - 1743

[10] HALL VOLTAGE IN AN INHOMOGENEOUS MATERIAL [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 740 - +

[1] Ada-Hanifi M., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P353

[2] ADAHANIFI M, 1985, THESIS MONTPELLIER

[3] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570

[4] BOREL G, 1984, THESIS GRENOBLE

[5] BRONIATOWSKI A, 1982, J PHYS PARIS, P63

[6] INTERPRETATION OF THERMOELECTRIC-POWER IN SILICON-ON-SAPPHIRE FILMS BY MEANS OF A LONG-RANGE POTENTIAL-FLUCTUATION MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 325 - 329

[7] DUSSEAU JM, 1980, THESIS MONTPELLIER

[8] ON THE HALL-EFFECT IN POLYCRYSTALLINE SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 1080 - 1082

[9] ELECTRON-TUNNELING IN HEAVILY IN-DOPED POLYCRYSTALLINE CDS FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1738 - 1743

[10] HALL VOLTAGE IN AN INHOMOGENEOUS MATERIAL [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 740 - +