ELECTRON-TUNNELING IN HEAVILY IN-DOPED POLYCRYSTALLINE CDS FILMS

被引：49

作者：

GARCIACUENCA, MV

MORENZA, JL

ESTEVE, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.334170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1738 / 1743

页数：6

共 26 条

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[8] ELECTRICAL TRANSPORT-PROPERTIES OF HEAVILY INDIUM-DOPED POLYCRYSTALLINE CDS FILMS [J].

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