INTERPRETATION OF HALL AND RESISTIVITY MEASUREMENTS IN POLYCRYSTALLINE SILICON

被引：18

作者：

GHOSH, AK

ROSE, A

MARUSKA, HP

FENG, T

EUSTACE, DJ

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 02期

关键词：

D O I：

10.1007/BF02654670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：237 / 260

页数：24

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