ROOM-TEMPERATURE BLUE-LIGHT EMITTING P-N DIODES FROM ZN(S,SE)-BASED MULTIPLE QUANTUM-WELL STRUCTURES

被引:83
作者
XIE, W
GRILLO, DC
GUNSHOR, RL
KOBAYASHI, M
JEON, H
DING, J
NURMIKKO, AV
HUA, GC
OTSUKA, N
机构
[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907
[2] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
[3] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912
关键词
D O I
10.1063/1.107123
中图分类号
O59 [应用物理学];
学科分类号
摘要
Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 10(5)/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.
引用
收藏
页码:1999 / 2001
页数:3
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