FABRICATION OF GAAS ARROWHEAD-SHAPED QUANTUM WIRES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION SELECTIVE GROWTH

被引：60

作者：

TSUKAMOTO, S

NAGAMUNE, Y

NISHIOKA, M

ARAKAWA, Y

机构：

[1] Research Center for Advanced Science and Technology, University of Tokyo, Meguro-ku, Tokyo 153

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 01期

关键词：

D O I：

10.1063/1.109614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated GaAs arrowhead-shaped quantum wires utilizing both the selective growth technique and the difference in the stabilized crystal facet between GaAs and Al0.4Ga0.6As; the stabilized facet of the GaAs layer is (111)A and that of the Al0.4Ga0.6As layer is (311)A. A systematic change in the size of the quantum wire exhibits blue shifts of the photoluminescence peak, which is due to enhancement of the two-dimensional quantum confinement effect.

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页码：49 / 51

页数：3

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