MODULAR BIPOLAR ANALYSIS .2. THEORY

被引：5

作者：

DUNKLEY, JL ^{[1
]}

KANG, SD ^{[1
]}

机构：

[1] TEXAS INSTR INC,HOUSTON,TX

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 03期

关键词：

D O I：

10.1109/T-ED.1978.19074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A set of general recursive equations that are used with a generalized modular model is described. The model is used to analyze realistic bipolar junction devices from their physical geometries and impurity profiles. An individual device is partitioned into simple one-dimensional modules which enables the closed recursive equations to be used in solving for each module's electrical parameters. A companion paper describes how the Individual module parameters are then superimposed upon the physical structure to obtain the intrinsic parameters that electrically represents the bipolar junction device. The device can be fully analyzed on any circuit analysis program by adding its appropriate bulk resistances and junction capacitances. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：294 / 306

页数：13

共 36 条

[1] BIBLIOGRAPHY ON SEMICONDUCTOR-DEVICE MODELING [J].