ERDA OF HYDROGEN AND HELIUM USING AN 8 MEV O-16 BEAM

An 8 MeV 16O beam was used to profile the depth concentration of 1,2H and 4He implanted into silicon wafers and stainless steel (SUS316). The measured energy spectra of recoiled particles have been unfolded to obtain depth profiles. The TRIM'86 data have been utilized to calculate the response matrix which takes account of the energy loss of particles in the sample and absorber foil. The unfolded depth profiles have been compared with profiles estimated from the condition of sample preparation. We have adjusted the experimental conditions such as the incident and detection angles to optimize the depth resolution. The depth resolution (FWHM) is typically 35 nm for hydrogen in silicon wafers at a depth of 50 nm, and 20 nm for helium in stainless steel over the depth interval 0-150 nm, respectively. In this article we will present results of experiments and unfolding calculations. © 1990.