ORIGIN OF HYDROGEN IN AMORPHOUS-SILICON PRODUCED BY GLOW-DISCHARGE IN SI2H6+D2 AND SI2D6+H2

被引：7

作者：

KUBOI, O ^{[1
]}

HASHIMOTO, M ^{[1
]}

YATSURUGI, Y ^{[1
]}

NAGAI, H ^{[1
]}

ARATANI, M ^{[1
]}

YANOKURA, M ^{[1
]}

HAYASHI, S ^{[1
]}

KOHNO, I ^{[1
]}

NOZAKI, T ^{[1
]}

机构：

[1] INST PHYS & CHEM RES, WAKO, SAITAMA 351, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.95308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：543 / 545

页数：3

共 8 条

[1] DECOMPOSITION KINETICS OF A STATIC DIRECT-CURRENT SILANE GLOW-DISCHARGE
LONGEWAY, PA
ESTES, RD
WEAKLIEM, HA
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (01) : 73 - 77
[2] GLOW-DISCHARGE DEPOSITION OF A-SI-H FROM PURE SI2H6 AND PURE SIH4
MATSUDA, A
KAGA, T
TANAKA, H
MALHOTRA, L
TANAKA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L115 - L117
[3] MATSUDA A, 1983, 10TH INT C AM LIQ SE
[4] SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE
MISHIMA, Y
HIROSE, M
OSAKA, Y
NAGAMINE, K
ASHIDA, Y
KITAGAWA, N
ISOGAYA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01): : L46 - L48
[5] GLOW-DISCHARGE PREPARATION OF AMORPHOUS HYDROGENATED SILICON FROM HIGHER SILANES
SCOTT, BA
BRODSKY, MH
GREEN, DC
KIRBY, PB
PLECENIK, RM
SIMONYI, EE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 725 - 727
[6] KINETICS AND MECHANISM OF AMORPHOUS HYDROGENATED SILICON GROWTH BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITION
SCOTT, BA
PLECENIK, RM
SIMONYI, EE
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 73 - 75
[7] GROWTH AND DEFECT CHEMISTRY OF AMORPHOUS HYDROGENATED SILICON
SCOTT, BA
REIMER, JA
LONGEWAY, PA
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6853 - 6863
[8] STUDIES OF A-SI-H GROWTH-MECHANISM BY RUTHERFORD RECOIL MEASUREMENT OF H AND D IN FILMS PREPARED FROM SIH4-D2 AND SID4-H2
YATSURUGI, Y
KUBOI, O
HASHIMOTO, M
NAGAI, H
ARATANI, M
YANOKURA, M
KOHNO, I
NOZAKI, T
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 246 - 248

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