HIGH-QUALITY SELF-NUCLEATED ALXGA1-X N LAYERS ON (00.1) SAPPHIRE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：83

作者：

WICKENDEN, DK

BARGERON, CB

BRYDEN, WA

MIRAGLIOTTA, J

KISTENMACHER, TJ

机构：

[1] Applied Physics Laboratory, Johns Hopkins University, Laurel

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 16期

关键词：

D O I：

10.1063/1.112782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality Al(x)Ga1-xN alloy films with x<0.4 have been prepared on self-nucleated (00.1) sapphire substrates by low-pressure metalorganic chemical vapor deposition. It has been shown that the lattice constant of the films varies linearly with alloy composition x (Vegard's law is obeyed) and that homogeneous and inhomogeneous strain and alloy clustering are minimized in these self-nucleated Al(x)Ga1-xN films. Consistent with their reduced strain and chemical uniformity, the derived optical band gaps of these Al(x)Ga1-xN films also show a linear dependence on alloy composition x, yielding a bowing parameter b almost-equal-to0 eV. (C) 1994 American Institute of Physics.

引用

页码：2024 / 2026

页数：3

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