SCANNING CAPACITACE MICROSCOPE ATOMIC-FORCE MICROSCOPE SCANNING TUNNELING MICROSCOPE STUDY OF ION-IMPLANTED SILICON SURFACES

We have investigated the local electrical properties of ion-implanted Si using a combined scanning capacitance microscope (SCaM)/atomic force microscope (AFM)/scanning tunneling microscope (STM) with special attention paid to the effect of annealing. The STM image shows that the as-implanted area is insulating, while the unimplanted area is conductive, in an unannealed sample. Both STM and SCaM images clearly indicate that the implanted area is conductive with n-type behavior after annealing. However, the unimplanted area did not show p-type behavior but slightly n-type behavior due to the diffusion of P impurities during annealing.