DELOCALIZATION OF DEFECTS - A NEW MODEL FOR THE SCHOTTKY-BARRIER

被引：6

作者：

LUDEKE, R ^{[1
]}

TALEBIBRAHIMI, A ^{[1
]}

JEZEQUEL, G ^{[1
]}

机构：

[1] UNIV RENNES 1, F-35042 RENNES, FRANCE

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90048-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A Schottky barrier model is developed based on the existence of a large density of midgap impurity/defect levels at the interface, which evolve into resonance as the result of their interaction with the metallic states. The degree of charging of the resonances determines the position of the Fermi level, and consequently the Schottky barrier heights. Model predictions compare favorably with experimental results for metals on GaAs. The consequences of inhomogeneously broadened impurity levels on model predictions are briefly considered as well. © 1989.

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页码：151 / 158

页数：8

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