LOW-TEMPERATURE GROWTH OF (CD,HG)TE LAYERS BY MOVPE

被引：8

作者：

DESJONQUERES, F ^{[1
]}

TROMSONCARLI, A ^{[1
]}

CHEUVART, P ^{[1
]}

DRUILHE, R ^{[1
]}

GRATTEPAIN, C ^{[1
]}

KATTY, A ^{[1
]}

MARFAING, Y ^{[1
]}

TRIBOULET, R ^{[1
]}

LORANS, D ^{[1
]}

机构：

[1] SOC ANONYME TELECOMMUN,F-75624 PARIS,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90531-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MCT layers have been grown for the first time at 250-degrees-C using DATe, DMCd and mercury. First the buffer layer CdTe grown at 365-degrees-C using DIPTe and DMCd is studied with an emphasis on the influence of the substrate orientation. Indeed the surface morphology and the crystalline quality may change dramatically as a function of the substrate orientation. Then the low temperature MOVPE growth of (Cd,Hg)Te is described: different compositions were achieved and the crystalline and electronic properties are presented.

引用

页码：626 / 631

页数：6