A NEW FAST-RESPONSE HG VAPOR SOURCE FOR HGCDTE MOLECULAR-BEAM EPITAXY GROWTH

被引：10

作者：

WAGNER, BK

BENZ, RG

SUMMERS, CJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.576115

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：295 / 299

页数：5

共 8 条

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[3]

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[4] A MERCURY SOURCE FOR MOLECULAR-BEAM EPITAXY [J].

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[5]

HENRY J, 1986, METAL FINISH GUIDEB, V84, P374

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF 2-IN-DIAM HG1-XCDXTE FILMS ON GAAS (100) SUBSTRATES [J].

LANGE, MD ;

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CHU, X ;

FAURIE, JP .

APPLIED PHYSICS LETTERS, 1988, 52 (12) :978-980

[7] MOLECULAR-BEAM EPITAXY OF CDXHG1-X TE AT D.LETI LIR [J].

MILLION, A ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2813-2820

[8] EXIT LOSS IN VISCOUS TUBE FLOW [J].

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