PHONON-MEDIATED INDIRECT INTERACTIONS BETWEEN ADATOMS ON SURFACES - O ADATOMS ON SI(100)

被引:11
作者
TIERSTEN, SC
REINECKE, TL
YING, SC
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 14期
关键词
D O I
10.1103/PhysRevB.43.12045
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In an earlier paper, we presented a general treatment of the phonon-mediated interactions between adatoms on surfaces, based on a lattice-dynamics approach. There the interaction was expressed in terms of the vibrational correlation functions of the surface and the interactions of the adatom with the rigid surface. In the present paper, we give the results of model calculations for the interactions between O adatoms on the dimer sites of the Si(100) surface. The approach developed earlier for the vibrational properties of the Si(100) surface is used, and a model for the interactions of the O adatoms with the surface is obtained on the basis of recent total-energy results.
引用
收藏
页码:12045 / 12048
页数:4
相关论文
共 19 条
[1]   THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].
APPELBAUM, JA ;
HAMANN, DR .
SURFACE SCIENCE, 1978, 74 (01) :21-33
[2]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[3]   CHEMISORPTION OF ATOMIC OXYGEN ON SI(100) - SELF-CONSISTENT CLUSTER AND SLAB MODEL INVESTIGATIONS [J].
BATRA, IP ;
BAGUS, PS ;
HERMANN, K .
PHYSICAL REVIEW LETTERS, 1984, 52 (05) :384-387
[4]   INTERPRETATION OF THE SPECTRA OBTAINED FROM OXYGEN-ADSORBED AND OXIDIZED SILICON SURFACES [J].
CIRACI, S ;
ELLIALTIOGLU, S ;
ERKOC, S .
PHYSICAL REVIEW B, 1982, 26 (10) :5716-5729
[5]   PEROXY RADICAL MODEL FOR CHEMISORPTION OF O-2 ONTO SILICON SURFACES [J].
GODDARD, WA ;
REDONDO, A ;
MCGILL, TC .
SOLID STATE COMMUNICATIONS, 1976, 18 (08) :981-984
[6]   KINETICS AND MECHANISM OF OXYGEN ADSORPTION ON SINGLE CRYSTALS OF GERMANIUM [J].
GREEN, M ;
LIBERMAN, A .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) :1407-+
[7]   THE ADSORPTION OF OXYGEN ON CLEAN SILICON SURFACES [J].
GREEN, M ;
MAXWELL, KH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (1-2) :145-150
[8]   VIBRATIONAL STUDY OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) AND SI(100) SURFACES [J].
IBACH, H ;
BRUCHMANN, HD ;
WAGNER, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (03) :113-124
[9]   ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J].
IBACH, H ;
ROWE, JE .
PHYSICAL REVIEW B, 1974, 10 (02) :710-718
[10]   SEMICONDUCTOR SURFACE STRUCTURES [J].
Kahn, A. .
SURFACE SCIENCE REPORTS, 1983, 3 (4-5) :193-300