HYBRID-TYPE INGAALP/GAAS DISTRIBUTED BRAGG REFLECTORS FOR INGAALP LIGHT-EMITTING-DIODES

被引：34

作者：

SUGAWARA, H

ITAYA, K

HATAKOSHI, G

机构：

[1] Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Saivxii-ku, Kawasaki, 210

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 11期

关键词：

DBR; LED; INGAAIP; GAALAS; EXTERNAL QUANTUM EFFICIENCY;

D O I：

10.1143/JJAP.33.6195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hybrid-type distributed Bragg reflectors (DBRs) with InAlP/GaAs and InAlP/InGaAlP multilayers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. The structure of the DBRs was designed using a theoretical calculations considering the absorption loss and refractive index of each stacked layer. The wide-band, high-reflectivity characteristics were also experimentally confirmed. Good electrical conductivity through InGaAlP light-emitting diodes (LEDs) with the hybrid-type DBRs was obtained in spite of the many interface needed for the multiple layers of the DBRs. A luminous intensity of 0.8 ed was obtained at 565.7 nm (nearly pure green light).

引用

页码：6195 / 6198

页数：4

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