DEFECTS AND RECOMBINATION IN A-SI-1-XGEX-H

被引：14

作者：

FUHS, W

FINGER, F

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90594-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：387 / 392

页数：6

共 24 条

[1]

ALJISHI S, 1989, MRS S P SAN DIEGO

[2]

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[4]

BEYER W, 1987, J NONCRYST SOLIDS, V97, P1017

[5]

BORT M, 1989, J NON-CRYST, V114

[6] INFLUENCE OF THE DEFECT CONCENTRATION ON THE RECOMBINATION IN ELECTRON BOMBARDED A-SI-GE-H ALLOYS STUDIED BY PHOTOLUMINESCENCE AND ELECTRON-SPIN RESONANCE [J].

CARIUS, R ;

FINGER, F .

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[7] PHOTOLUMINESCENCE OF DOPED AND UNDOPED AMORPHOUS SI/GE ALLOYS [J].

CARIUS, R ;

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FUHS, W .

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[8] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J].

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BEICHLER, J .

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[9] PHOTOEMISSION-STUDIES OF AMORPHOUS-SEMICONDUCTOR HETEROJUNCTIONS [J].

EVANGELISTI, F .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :969-977

[10] HYPERFINE INTERACTION IN PHOSPHORUS-DOPED AMORPHOUS-SILICON GERMANIUM ALLOYS [J].

FINGER, F ;

FUHS, W ;

CARIUS, R .

PHILOSOPHICAL MAGAZINE LETTERS, 1988, 57 (04) :235-240

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