STRUCTURE OF ALUMINUM-OXIDE FILMS DEPOSITED BY DC REACTIVE SPUTTERING

被引：13

作者：

GORANCHEV, B ^{[1
]}

ORLINOV, V ^{[1
]}

PRZYBOROWSKI, F ^{[1
]}

WEISSMANTEL, C ^{[1
]}

机构：

[1] TH KARL MARX STADT,SEKT PHYS ELEKTR BAUELEMENTE,DDR-964 KARL MARX STADT,GER DEM REP

来源：

THIN SOLID FILMS | 1980年 / 70卷 / 01期

关键词：

D O I：

10.1016/0040-6090(80)90418-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：111 / 116

页数：6

共 9 条

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[3] DIRECT-CURRENT REACTIVE SPUTTERING OF ALUMINUM [J].

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PETROV, I .

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[4] PROPERTIES OF ALUMINUM OXIDE FILMS OBTAINED FROM NITROUS OXIDE AND ALUMINUM TRIMETHYL [J].

HALL, LH ;

ROBINETTE, WC .

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[5] PHYSICAL AND CHEMICAL PROPERTIES OF ALUMINUM-OXIDE FILM DEPOSITED BY ALCL3-CO2-H2 SYSTEM [J].

IIDA, K ;

TSUJIDE, T .

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[6]

Orlinov V., 1975, Bulgarian Journal of Physics, V2, P431

[7]

PRZYBOROWSKI F, 1978, 9 TAG EL MIKR DRESD

[8]

THOMAS K, 1974, ELECTRON PACK PROD, V14, P136

[9] INFLUENCE OF AL2O3 DEPOSITION TEMPERATURE ON CHARGE-STORAGE AND RETENTION IN MA(O)S STRUCTURES [J].

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IIDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (11) :1599-&

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