DIRECT-CURRENT REACTIVE SPUTTERING OF ALUMINUM

[1] PHASE CHANGES IN THIN REACTIVELY SPUTTERED ALUMINA FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (04) : 357 - &

[2] DC CATHODE SPUTTERING - INFLUENCE OF OXYGEN-CONTENT IN GAS-FLOW ON DISCHARGE CURRENT [J]. THIN SOLID FILMS, 1976, 33 (02) : 173 - 183

[3] INTERFACE PROPERTIES OF AL2O3-GE STRUCTURE AND CHARACTERISTICS OF AL2O3-GE MOS TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (02) : 260 - +

[4] AL2O3-SILICON MOS FIELD EFFECT TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (02) : 277 - +

[5] Orlinov V., 1975, Bulgarian Journal of Physics, V2, P431

[6] ORLINOV VI, 1974, DOKL BOLG AKAD NAUK, V27, P325

[7] SPECTROSCOPIC INVESTIGATION OF REACTIVE SPUTTERING OF ALUMINIUM [J]. THIN SOLID FILMS, 1971, 7 (01) : 1 - &

[1] PHASE CHANGES IN THIN REACTIVELY SPUTTERED ALUMINA FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (04) : 357 - &

[2] DC CATHODE SPUTTERING - INFLUENCE OF OXYGEN-CONTENT IN GAS-FLOW ON DISCHARGE CURRENT [J]. THIN SOLID FILMS, 1976, 33 (02) : 173 - 183

[3] INTERFACE PROPERTIES OF AL2O3-GE STRUCTURE AND CHARACTERISTICS OF AL2O3-GE MOS TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (02) : 260 - +

[4] AL2O3-SILICON MOS FIELD EFFECT TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (02) : 277 - +

[5] Orlinov V., 1975, Bulgarian Journal of Physics, V2, P431

[6] ORLINOV VI, 1974, DOKL BOLG AKAD NAUK, V27, P325

[7] SPECTROSCOPIC INVESTIGATION OF REACTIVE SPUTTERING OF ALUMINIUM [J]. THIN SOLID FILMS, 1971, 7 (01) : 1 - &