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PHYSICAL AND CHEMICAL PROPERTIES OF ALUMINUM-OXIDE FILM DEPOSITED BY ALCL3-CO2-H2 SYSTEM
被引:57
作者
:
IIDA, K
论文数:
0
引用数:
0
h-index:
0
IIDA, K
TSUJIDE, T
论文数:
0
引用数:
0
h-index:
0
TSUJIDE, T
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1972年
/ 11卷
/ 06期
关键词
:
D O I
:
10.1143/JJAP.11.840
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:840 / &
相关论文
共 23 条
[1]
PYROLYTIC DEPOSITION OF SILICON DIOXIDE FOR 600-DEGREES-C THIN FILM CAPACITORS
BARNES, CR
论文数:
0
引用数:
0
h-index:
0
BARNES, CR
GEESNER, CR
论文数:
0
引用数:
0
h-index:
0
GEESNER, CR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(05)
: 361
-
362
[2]
BARRER AS, 1963, PHYS REV, V132, P1474
[3]
BEARD MF, 1968, J AM CERAM SOC, V51, P643
[4]
THICKNESS MEASUREMENTS OF SILICON DIOXIDE FILMS ON SILICON BY INFRARED ABSORPTION TECHNIQUES
DIAL, JE
论文数:
0
引用数:
0
h-index:
0
机构:
Microelectronics Division, Philco-Ford Corporation, Santa Clara, California
DIAL, JE
GONG, RE
论文数:
0
引用数:
0
h-index:
0
机构:
Microelectronics Division, Philco-Ford Corporation, Santa Clara, California
GONG, RE
FORDEMWALT, JN
论文数:
0
引用数:
0
h-index:
0
机构:
Microelectronics Division, Philco-Ford Corporation, Santa Clara, California
FORDEMWALT, JN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 326
-
+
[5]
DOO VT, 1969, MAY NEW YORK M EL SO
[6]
INTERFACE PROPERTIES OF SI-(SIO2)-AL2 O3 STRUCTURES
DUFFY, MT
论文数:
0
引用数:
0
h-index:
0
DUFFY, MT
REVESZ, AG
论文数:
0
引用数:
0
h-index:
0
REVESZ, AG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(03)
: 372
-
+
[7]
GOLDSMITH N, 1967, RCA REV, V28, P153
[8]
SOME PROPERTIES OF SIO2 FILMS DEPOSITED BY REACTION OF SIH4 WITH WATER VAPOR
HANETA, Y
论文数:
0
引用数:
0
h-index:
0
HANETA, Y
NAKANUMA, S
论文数:
0
引用数:
0
h-index:
0
NAKANUMA, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(10)
: 1176
-
+
[9]
EFFECT OF HEAT TREATMENT ON INTERFACE CHARACTERISTICS IN REACTIVELY SPUTTERED AL2O3-SI STRUCTURES
HATTORI, T
论文数:
0
引用数:
0
h-index:
0
HATTORI, T
IWAUCHI, S
论文数:
0
引用数:
0
h-index:
0
IWAUCHI, S
NAGANO, K
论文数:
0
引用数:
0
h-index:
0
NAGANO, K
TANAKA, T
论文数:
0
引用数:
0
h-index:
0
TANAKA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1971,
10
(02)
: 203
-
&
[10]
EFFECTS OF HEAT-TREATMENT ON INTERFACE CHARACTERISTICS IN SI-AL2O3 AND SI-SIO2-AL2O3 SYSTEMS
IIDA, K
论文数:
0
引用数:
0
h-index:
0
IIDA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(03)
: 288
-
+
←
1
2
3
→
共 23 条
[1]
PYROLYTIC DEPOSITION OF SILICON DIOXIDE FOR 600-DEGREES-C THIN FILM CAPACITORS
BARNES, CR
论文数:
0
引用数:
0
h-index:
0
BARNES, CR
GEESNER, CR
论文数:
0
引用数:
0
h-index:
0
GEESNER, CR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(05)
: 361
-
362
[2]
BARRER AS, 1963, PHYS REV, V132, P1474
[3]
BEARD MF, 1968, J AM CERAM SOC, V51, P643
[4]
THICKNESS MEASUREMENTS OF SILICON DIOXIDE FILMS ON SILICON BY INFRARED ABSORPTION TECHNIQUES
DIAL, JE
论文数:
0
引用数:
0
h-index:
0
机构:
Microelectronics Division, Philco-Ford Corporation, Santa Clara, California
DIAL, JE
GONG, RE
论文数:
0
引用数:
0
h-index:
0
机构:
Microelectronics Division, Philco-Ford Corporation, Santa Clara, California
GONG, RE
FORDEMWALT, JN
论文数:
0
引用数:
0
h-index:
0
机构:
Microelectronics Division, Philco-Ford Corporation, Santa Clara, California
FORDEMWALT, JN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 326
-
+
[5]
DOO VT, 1969, MAY NEW YORK M EL SO
[6]
INTERFACE PROPERTIES OF SI-(SIO2)-AL2 O3 STRUCTURES
DUFFY, MT
论文数:
0
引用数:
0
h-index:
0
DUFFY, MT
REVESZ, AG
论文数:
0
引用数:
0
h-index:
0
REVESZ, AG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(03)
: 372
-
+
[7]
GOLDSMITH N, 1967, RCA REV, V28, P153
[8]
SOME PROPERTIES OF SIO2 FILMS DEPOSITED BY REACTION OF SIH4 WITH WATER VAPOR
HANETA, Y
论文数:
0
引用数:
0
h-index:
0
HANETA, Y
NAKANUMA, S
论文数:
0
引用数:
0
h-index:
0
NAKANUMA, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(10)
: 1176
-
+
[9]
EFFECT OF HEAT TREATMENT ON INTERFACE CHARACTERISTICS IN REACTIVELY SPUTTERED AL2O3-SI STRUCTURES
HATTORI, T
论文数:
0
引用数:
0
h-index:
0
HATTORI, T
IWAUCHI, S
论文数:
0
引用数:
0
h-index:
0
IWAUCHI, S
NAGANO, K
论文数:
0
引用数:
0
h-index:
0
NAGANO, K
TANAKA, T
论文数:
0
引用数:
0
h-index:
0
TANAKA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1971,
10
(02)
: 203
-
&
[10]
EFFECTS OF HEAT-TREATMENT ON INTERFACE CHARACTERISTICS IN SI-AL2O3 AND SI-SIO2-AL2O3 SYSTEMS
IIDA, K
论文数:
0
引用数:
0
h-index:
0
IIDA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(03)
: 288
-
+
←
1
2
3
→