SOME PROPERTIES OF SIO2 FILMS DEPOSITED BY REACTION OF SIH4 WITH WATER VAPOR

被引：19

作者：

HANETA, Y

NAKANUMA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1967年 / 6卷 / 10期

关键词：

D O I：

10.1143/JJAP.6.1176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1176 / +

页数：1

相关论文

共 19 条

[1] LOW-TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS
ALT, LL
ING, SW
LAENDLE, KW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 465 - 465
[2] MEASUREMENT OF THICKNESS AND REFRACTIVE INDEX OF OXIDE FILMS ON SILICON
BOOKER, GR
BENJAMIN, CE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1206 - 1212
[3] AN INVESTIGATION OF THE OPTICAL PROPERTIES AND THE GROWTH OF OXIDE FILMS ON SILICON
CLAUSSEN, BH
FLOWER, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 983 - 987
[4] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533
[5] ELECTRODE REACTIONS AND MECHANISM OF SILICON ANODIZATION IN N-METHYLACETAMIDE
DUFFEK, EF
MYLROIE, C
BENJAMINI, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (09) : 1042 - 1046
[6] HANETA Y, TO BE PUBLISHED
[7] HANETA Y, 1966, 17 M CITCE
[8] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE
HEIMAN, FP
WARFIELD, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &
[9] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER
HOFSTEIN, SR
WARFIELD, G
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 321 - +
[10] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES
HOFSTEIN, SR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +