COPPER CONTAMINATION DURING VAPOR EPITAXIAL-GROWTH OF GAAS

被引：14

作者：

FABRE, E

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 9卷 / 01期

关键词：

D O I：

10.1002/pssa.2210090130

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：259 / &

共 12 条

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[3]

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[6] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS [J].

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[7]

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[8] PHOTOLUMINESCENCE STUDY OF INTERFACE BETWEEN GAAS EPITAXIAL LAYER AND ITS SUBSTRATE [J].

NAKASHIMA, H ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (12) :1495-+

[9]

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[10]

QUEISSER HB, 1965, J APPL PHYS, V37, P4895

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