LA AND TA PHONONS IN INTERVAL ABSORPTION IN GAAS

被引:1
作者
BOIS, D [1 ]
PINARD, P [1 ]
机构
[1] INST NATL SCI APPL,LAB PHYS MAT,LYON,FRANCE
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 15卷 / 02期
关键词
D O I
10.1002/pssa.2210150257
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K127 / K131
页数:5
相关论文
共 8 条
[1]   OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J].
BALSLEV, I .
PHYSICAL REVIEW, 1968, 173 (03) :762-&
[2]   LATTICE DYNAMICS OF 3-V COMPOUNDS [J].
BANERJEE, R ;
VARSHNI, YP .
CANADIAN JOURNAL OF PHYSICS, 1969, 47 (04) :451-&
[3]   OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 1.3 EV [J].
BOIS, D ;
PINARD, P .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (01) :85-&
[4]  
BOIS D, 1972, THESIS LYON
[5]   ELECTRON SCATTERING IN INSB [J].
EHRENREICH, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) :131-149
[6]   FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) :658-&
[7]   FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS .4. INTER-CONDUCTION BAND TRANSITIONS [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (09) :1596-&
[8]  
MOSS TS, 1961, OPTICAL PROPERTIES S