DELAYS AND Q-SWITCHING IN SEMICONDUCTOR LASERS - STILL AN OPEN QUESTION

被引：19

作者：

RIPPER, JE ^{[1
]}

ROSSI, JA ^{[1
]}

机构：

[1] MIT, LINCOLN LAB, LEXINGTON, MA 02173 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1974年 / QE10卷 / 04期

关键词：

D O I：

10.1109/JQE.1974.1068160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：435 / 441

页数：7

共 56 条

[1] TIME DELAYS AND Q-SWITCHING IN HOMOSTRUCTURE AND HETEROSTRUCTURE INJECTION LASERS
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DAVIES, CFL
MISTRY, D
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 328 - 337
[2] Aritome H., 1971, Scientific Papers of the Institute of Physical and Chemical Research, V65, P10
[3] Aritome H., 1970, Opto-Electronics, V2, P239, DOI 10.1007/BF01476395
[4] INTERNAL Q-SWITCHING IN A CDS LASER PUMPED BY AN ELECTRON BEAM
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NAMBA, S
IKEGAMI, T
MASUDA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (11) : 1655 - &
[5] A LARGE TIME DELAY OF STIMULATED EMISSION IN CDS LASER PUMPED BY AN ELECTRON BEAM
ARITOME, H
MASUDA, K
NAMBA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (05) : 579 - &
[6] EFFECT OF SATURABLE ABSORPTION ON BEHAVIOR OF SPONTANEOUS EMISSION IN SEMICONDUCTOR LASERS
BROSSON, P
PATEL, N
RIPPER, JE
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (02) : 94 - 95
[7] ELECTROLUMINESCENCE IN AMPNOTERIC SILICON-DOPED GAAS DIODES .2. TRANSIENT RESPONSE
BYER, NE
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1602 - &
[8] IMPROVED ROOM-TEMPERATURE LASER PERFORMANCE IN GAAS DIFFUSED-JUNCTION DIODES
CARLSON, RO
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 661 - &
[9] LONG LIFETIME (LASER) STATES IN PARA-TYPE SI-DOPED GAAS
CRAFORD, MG
HERZOG, AH
HOLONYAK, N
KEUNE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2648 - &
[10] GAAS-GAASP HETEROSTRUCTURE INJECTION LASERS
CRAFORD, MG
GROVES, WO
FOX, MJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 355 - +

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