EFFECT OF SATURABLE ABSORPTION ON BEHAVIOR OF SPONTANEOUS EMISSION IN SEMICONDUCTOR LASERS

被引：14

作者：

BROSSON, P ^{[1
]}

PATEL, N ^{[1
]}

RIPPER, JE ^{[1
]}

机构：

[1] UNIV ESTADUAL CAMPINAS, INST FIS GLEB WATAGHIN, CAMPINAS, BRAZIL

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 02期

关键词：

D O I：

10.1063/1.1654821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：94 / 95

页数：2

共 17 条

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PATEL, NB .

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DYMENT, JC ;

RIPPER, JE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) :155-+

[3] DELAY OF STIMULATED EMISSION IN GAAS LASER DIODES NEAR ROOM TEMPERATURE [J].

FENNER, GE .

SOLID-STATE ELECTRONICS, 1967, 10 (08) :753-&

[4] A LOW-THRESHOLD ROOM-TEMPERATURE INJECTION LASER [J].

HAYASHI, I ;

PANISH, MB ;

FOY, PW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) :211-&

[5] TURN-ON DELAY IN GALLIUM ARSENIDE LASERS OPERATED AT ROOM TEMPERATURE [J].

KONNERTH, K .

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[6]

KRESSEL H, 1969, RCA REV, V30, P106

[7] ANALYSIS OF A PROPOSED BISTABLE INJECTION LASER [J].

LASHER, GJ .

SOLID-STATE ELECTRONICS, 1964, 7 (10) :707-716

[8]

LEE TP, 1970, IEEE J QUANTUM ELECT, VQE 6, P339

[9] DECREASE IN SPONTANEOUS EMISSION AT ONSET OF LASING IN SEMICONDUCTORS [J].

NICOLL, FH .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2743-&

[10] OPTICAL FILLING OF DELAY-INDUCING TRAPS IN INJECTION LASERS [J].

PANKOVE, JI .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (06) :427-&

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