STRESS-INDUCED LAYER-BY-LAYER GROWTH OF GE ON SI(100)

被引：142

作者：

TERSOFF, J

机构：

[1] IBM Research Division, Thomas J. Watson Reserach Center, Yorktown Heights

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.43.9377

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several experiments have found that Ge initially grows layer by layer on the Si(100)2 x 1 surface, up to a thickness of 3 atomic layers. Further growth occurs via islands. Here, model calculations show that layer-by-layer growth is stabilized for up to 3 layers because it reduces the strain energy associated with the surface dimerization.

引用

页码：9377 / 9380

页数：4

共 20 条

[1] SPONTANEOUS FORMATION OF STRESS DOMAINS ON CRYSTAL-SURFACES
ALERHAND, OL
VANDERBILT, D
MEADE, RD
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (17) : 1973 - 1976
[2] FINITE-TEMPERATURE PHASE-DIAGRAM OF VICINAL SI(100) SURFACES
ALERHAND, OL
BERKER, AN
JOANNOPOULOS, JD
VANDERBILT, D
HAMERS, RJ
DEMUTH, JE
[J]. PHYSICAL REVIEW LETTERS, 1990, 64 (20) : 2406 - 2409
[3] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100)
APPELBAUM, JA
HAMANN, DR
[J]. SURFACE SCIENCE, 1978, 74 (01) : 21 - 33
[4] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE
ASAI, M
UEBA, H
TATSUYAMA, C
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2577 - 2583
[5] INFLUENCE OF SURFACTANTS IN GE AND SI EPITAXY ON SI(001)
COPEL, M
REUTER, MC
VONHOEGEN, MH
TROMP, RM
[J]. PHYSICAL REVIEW B, 1990, 42 (18): : 11682 - 11689
[6] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100)
EAGLESHAM, DJ
CERULLO, M
[J]. PHYSICAL REVIEW LETTERS, 1990, 64 (16) : 1943 - 1946
[7] THE INFLUENCE OF RECONSTRUCTION ON EPITAXIAL-GROWTH - GE ON SI(100)-2X1) AND SI(111)-(7X7)
GOSSMANN, HJ
FELDMAN, LC
GIBSON, WM
[J]. SURFACE SCIENCE, 1985, 155 (2-3) : 413 - 431
[8] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE
KEATING, PN
[J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &
[9] EQUILIBRIUM ALLOY PROPERTIES BY DIRECT SIMULATION - OSCILLATORY SEGREGATION AT THE SI-GE(100) 2X1 SURFACE
KELIRES, PC
TERSOFF, J
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (11) : 1164 - 1167
[10] MICROSTRUCTURE AND STRAIN RELIEF OF GE FILMS GROWN LAYER BY LAYER ON SI(001)
LEGOUES, FK
COPEL, M
TROMP, RM
[J]. PHYSICAL REVIEW B, 1990, 42 (18): : 11690 - 11700

← 1 2 →