EXPERIMENTAL-ANALYSIS OF HEMT BEHAVIOR UNDER LOW-TEMPERATURE CONDITIONS

被引：17

作者：

BELACHE, A ^{[1
]}

VANOVERSCHELDE, A ^{[1
]}

SALMER, G ^{[1
]}

WOLNY, M ^{[1
]}

机构：

[1] UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOD,F-59655 VILLENEUVE DASCQ,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 01期

关键词：

D O I：

10.1109/16.65729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental analysis of HEMT behavior under low-temperature conditions is presented. Specific measurements have been performed to investigate the deep-level trapping effects on basic device characteristics such as carrier concentration, electron mobility in the structure, and access resistances. The influence of the collapse phenomenon on the microwave device parameters completes the knowledge of these parasitic effects. Explanation of mechanisms responsible for the anomalous phenomena and means to suppress them are reported. Microwave parameters measurements demonstrate that HEMT's showing no parasitic collapse effects exhibit improved performance at 77 K. Large improvements of current gain cutoff frequency and noise figure are finally presented. © 1991 IEEE

引用

页码：3 / 13

页数：11

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