ZNTE AND CDTE - ZNTE SUPERLATTICES GROWN BY MOVPE

被引：13

作者：

MULLINS, JT

CLIFTON, PA

BROWN, PD

BRINKMAN, AW

WOODS, J

机构：

[1] Applied Physics Group, School of Engineering and Applied Science, University of Durham, Durham, DH1 3LE, South Road

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90945-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial layers of ZnTe and CdTe:ZnTe superlattices have been grown by MOVPE on {100} and {{circle, and vertical bar}111}B GaAs substrates at temperatures down to 300°C using di-isopropyl telluride. In contrast to growth at 410°C using di-ethyl telluride, these layers exhibit excellent morphology. Using RHEED, however, it has been possible to show that the morphology remains better on the {{circle, and vertical bar}111}B. ZnTe has also been grown on {100} GaSb. © 1989.

引用

页码：100 / 104

页数：5

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