THERMODYNAMIC CALCULATIONS OF CONGRUENT VAPORIZATION IN III-V SYSTEMS - APPLICATIONS TO THE IN-AS, GA-AS AND GA-IN-AS SYSTEMS

被引：26

作者：

SHEN, JY

CHATILLON, C

机构：

[1] Laboratoire de Thermodynamique et Physico-Chimie Métallurgiques, Associé au CNRS, URA 29, ENSEEG, Domaine Universitaire, BP 75

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 106卷 / 04期

关键词：

D O I：

10.1016/0022-0248(90)90028-J

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Conditions for congruent vaporization of GaAs, InAs and Ga(y)In1-yAs compounds under vacuum are calculated using thermodynamic data of basic binary and ternary systems. Erosion rates are predicted for the GaAs and InAs compounds that explain their tendancy to form liquid metallic droplets at their surface at high temperature. For the ternary Ga(y)In1-yAs compounds, partial congruent vaporization is defined that is useful for molecular beam epitaxy to avoid the droplet appearance at the compound surface. The maximal temperature for partial congruent vaporization is calculated as a function of the composition varying from pure InAs to pure GaAs. The curve has a maximum at 992 K for the Ga0.99In0.01As composition which explains the higher stability of these substrates under vacuum.

引用

页码：543 / 552

页数：10

共 19 条

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].

ARTHUR, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&

[2]

CARLSON KD, 1967, CHARACTERIZATION HIG, P00115

[3] REASSESSMENT OF THE THERMODYNAMIC PROPERTIES AND PHASE-DIAGRAMS OF THE GA-AS AND IN-AS SYSTEMS [J].

CHATILLON, C ;

ANSARA, I ;

WATSON, A ;

ARGENT, BB .

CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1990, 14 (02) :203-214

[4]

CHATILLON C, 1979, CHARACTERIZATION HIG, P181

[5] INSTABILITY CRITERIA IN TERNARY AND QUATERNARY-III-V EPITAXIAL SOLID-SOLUTIONS [J].

DECREMOUX, B .

JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :19-27

[6]

ERIKSSON G, 1973, CHEM SCRIPTA, V4, P193

[7] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J].

FOXON, CT ;

HARVEY, JA ;

JOYCE, BA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1693-&

[8] LANGMUIR EVAPORATION FROM (100), (111A), AND (111B) FACES OF GAAS [J].

GOLDSTEIN, B ;

SZOSTAK, DJ ;

BAN, VS .

SURFACE SCIENCE, 1976, 57 (02) :733-740

[9] PREFERENTIAL EVAPORATION OF IN FROM GAXIN1-XAS [J].

GOLDSTEIN, B ;

SZOSTAK, D .

APPLIED PHYSICS LETTERS, 1975, 26 (12) :685-687

[10] DETERMINATION OF MINIMUM ARSENIC PRESSURE FOR MOLECULAR-BEAM EPITAXY OF GA1-YINYAS/GAAS AND GA1-XALXAS [J].

HARMAND, JC ;

ALEXANDRE, F ;

BEERENS, J .

REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (08) :821-825

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