HIGH-GAIN (21 DB) PACKAGED SEMICONDUCTOR OPTICAL AMPLIFIERS

被引：1

作者：

BOUDREAU, R

MORRISON, R

SARGENT, R

HOLMSTROM, R

POWAZINIK, W

MELAND, E

WILMOT, E

LACOURSE, J

机构：

[1] GTE Laboratories Incorporated, Waltham, MA 02254

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 20期

关键词：

AMPLIFIERS; OPTICAL FIBERS; OPTICS; INTEGRATED OPTICS;

D O I：

10.1049/el:19911146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Record high gains of 20-21 dB have been reproducibly obtained using a new type of semiconductor optical amplifier package incorporating a 1.3-mu-m tilted-facet ridge amplifier. The package uses a novel two-temperature-zone design to achieve independent soldering of the input and output fibres.

引用

页码：1845 / 1846

页数：2

共 9 条

[1] BOUDREAU R, 1989, SPIE, V1177, P245
[2] CAMERON K, 1989, CLEO FM3, P426
[3] PERFORMANCE OF PACKAGED NEAR-TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER WITH MULTILONGITUDINAL MODE INPUT
EVANKOW, JD
OLSSON, NA
KU, RT
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1989, 7 (01) : 163 - 170
[4] MARSHALL IW, 1989, P EUROPEAN C COMMUNI
[5] REITH L, 1959, CLEO TUJ15, P82
[6] ULTRA-LOW-REFLECTIVITY SEMICONDUCTOR OPTICAL AMPLIFIERS WITHOUT ANTIREFLECTION COATINGS
RIDEOUT, W
HOLMSTROM, R
LACOURSE, J
MELAND, E
POWAZINIK, W
[J]. ELECTRONICS LETTERS, 1990, 26 (01) : 36 - 38
[7] AMPLIFIED SPONTANEOUS EMISSION AND GAIN CHARACTERISTICS OF FABRY-PEROT AND TRAVELING WAVE TYPE SEMICONDUCTOR-LASER AMPLIFIERS
THYLEN, L
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) : 1532 - 1537
[8] TSUJI S, 1990, OPTICAL AMPLIFIERS T
[9] YOCHINO K, 1989, ELECTRON LETT, V25, P62

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