OXYGEN-DEFECT COMPLEXES IN GERMANIUM

被引：15

作者：

WHAN, RW

STEIN, HJ

机构：

来源：

关键词：

D O I：

10.1063/1.1753842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：187 / 189

页数：3

共 7 条

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[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &
[2] DONOR EQUILIBRIA IN THE GERMANIUM-OXYGEN SYSTEM
FULLER, CS
KAISER, W
THURMOND, CD
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 17 (3-4) : 301 - 307
[3] ELECTRICAL AND OPTICAL INVESTIGATIONS OF DONOR FORMATION IN OXYGEN-DOPED GERMANIUM
KAISER, W
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAR) : 255 - &
[4] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM
KAISER, W
KECK, PH
LANGE, CF
[J]. PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268
[5] INFRARED STUDIES ON POLYMORPHS OF SILICON DIOXIDE AND GERMANIUM DIOXIDE
LIPPINCOTT, ER
VANVALKENBURG, A
WEIR, CE
BUNTING, EN
[J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1958, 61 (01): : 61 - 70
[6] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER
WATKINS, GD
CORBETT, JW
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1001 - &
[7] WELTZIN R, 1963, J PHYS SOC JPN, V18, P136