SCHOTTKY CONTACTS TO CLEAVED GAAS (110) SURFACES .2. THERMODYNAMIC ASPECTS

被引：22

作者：

MCGILP, JF

MCLEAN, AB

机构：

[1] UNIV DUBLIN TRINITY COLL,DEPT PURE & APPL PHYS,DUBLIN 2,IRELAND

[2] UNIV WALES UNIV COLL CARDIFF,DEPT PHYS,CARDIFF CF1 1XL,S GLAM,WALES

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1988年 / 21卷 / 04期

关键词：

D O I：

10.1088/0022-3719/21/4/017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：807 / 818

页数：12

共 51 条

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].

ANDREWS, JM ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59

[2]

BARIN I, 1977, THERMOCHEMICAL PRO S

[3]

Brandes E.A, 1983, SMITHELLS LIGHT META

[4] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263

[5] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[6] SN OVERLAYERS ON GAAS(110) - GROWTH-MECHANISM AND BAND BENDING [J].

BUNDGENS, N ;

LUTH, H ;

MATTERNKLOSSON, M ;

SPITZER, A ;

TULKE, A .

SURFACE SCIENCE, 1985, 160 (01) :46-56

[7] POSSIBILITY OF INCONGRUOUS INTERFACE BEHAVIOR OF IN ON GAAS(110) [J].

CHIN, KK ;

LINDAU, I .

PHYSICAL REVIEW B, 1985, 32 (10) :6902-6903

[8] GAAS(110)-IN - THE BLACK SHEEP IN A WELL-BEHAVED INTERFACE FAMILY [J].

DANIELS, RR ;

ZHAO, TX ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :831-834

[9] RARE-EARTH-METAL SEMICONDUCTOR INTERFACIAL REACTIONS - THERMODYNAMIC ASPECTS [J].

FUJIMORI, A ;

GRIONI, M ;

WEAVER, JH .

PHYSICAL REVIEW B, 1986, 33 (02) :726-735

[10] COMPOUND FORMATION AT THE INTERFACE BETWEEN COBALT THIN-FILMS AND SINGLE-CRYSTAL GAAS [J].

GENUT, M ;

EIZENBERG, M .

APPLIED PHYSICS LETTERS, 1987, 50 (19) :1358-1360

← 1 2 3 4 5 6 →