A simple yet realistic gate sizing theory is presented to optimize delay of a cascaded gate buffer. The theory is based on the fact that CMOS/BiCMOS gate delay is linearly dependent on fan-out f, that is, the delay can be expressed as Af + B, where A and B are coefficients. The optimum fan-out f(OPT) is shown to be approximated as e + B/1.5A for a gate chain. The theory covers various BiCMOS/CMOS gate types such as NAND's and NOR'S in a unified framework. The existence of spurious capacitance is shown to increase the size of all transistors compared with the case without the spurious capacitance.
机构:Department of Electrical Engineering and Computer Sciences, University of California, Semiconductor Device Engineering Laboratory, Toshiba Corporatior, Berkeley., Kawasaki, CA
SAKURAI, T
NEWTON, AR
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机构:Department of Electrical Engineering and Computer Sciences, University of California, Semiconductor Device Engineering Laboratory, Toshiba Corporatior, Berkeley., Kawasaki, CA
机构:Department of Electrical Engineering and Computer Sciences, University of California, Semiconductor Device Engineering Laboratory, Toshiba Corporatior, Berkeley., Kawasaki, CA
SAKURAI, T
NEWTON, AR
论文数: 0引用数: 0
h-index: 0
机构:Department of Electrical Engineering and Computer Sciences, University of California, Semiconductor Device Engineering Laboratory, Toshiba Corporatior, Berkeley., Kawasaki, CA