A UNIFIED THEORY FOR MIXED CMOS BICMOS BUFFER OPTIMIZATION

被引:6
作者
SAKURAI, T
机构
[1] Semiconductor Device Engineering Laboratory, J. Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku
关键词
BiCMOS buffers - CMOS gates - NOR circuits;
D O I
10.1109/4.142596
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A simple yet realistic gate sizing theory is presented to optimize delay of a cascaded gate buffer. The theory is based on the fact that CMOS/BiCMOS gate delay is linearly dependent on fan-out f, that is, the delay can be expressed as Af + B, where A and B are coefficients. The optimum fan-out f(OPT) is shown to be approximated as e + B/1.5A for a gate chain. The theory covers various BiCMOS/CMOS gate types such as NAND's and NOR'S in a unified framework. The existence of spurious capacitance is shown to increase the size of all transistors compared with the case without the spurious capacitance.
引用
收藏
页码:1014 / 1019
页数:6
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