LOW THRESHOLD CURRENT MOVPE GROWN GAINAS-AL(GA)INAS SEPARATE CONFINEMENT HETEROSTRUCTURE MULTIQUANTUM WELL METAL-CLAD RIDGE-WAVE-GUIDE LASERS EMITTING AT 1585-NM

被引：6

作者：

STEGMULLER, B

GESSNER, R

BESCHORNER, M

FRANZ, G

SACHER, D

BORCHERT, B

机构：

[1] Siemens AG, Research Laboratories

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 09期

关键词：

D O I：

10.1109/68.59326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInAs-AI(Ga)InAs separate confinement heterostructure (SCH) multiquantum well (MQW) metal-clad ridge-waveguide (MCRW) laser diodes were successfully fabricated for the first time from layer structures grown by atmospheric pressure (AP) metalorganic vapor phase epitaxy (MOVPE) on InP substrate without any use of phosphine. CW operation of 2.9 μm wide and 400 μm long MCRW laser diodes emitting at 1585 nm was demonstrated with a minimum threshold current of 38 mA. © 1990 IEEE

引用

页码：609 / 611

页数：3

共 8 条

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