DIELECTRIC FUNCTIONS AND CRITICAL-POINTS OF STRAINED INXGA1-XAS ON GAAS

被引：37

作者：

PICKERING, C ^{[1
]}

CARLINE, RT ^{[1
]}

EMENY, MT ^{[1
]}

GARAWAL, NS ^{[1
]}

HOWARD, LK ^{[1
]}

机构：

[1] UNIV SURREY, DEPT PHYS, GUILDFORD GU2 5XH, SURREY, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 19期

关键词：

D O I：

10.1063/1.106989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dielectric function spectra of strained InxGa1-xAs (x less-than-or-equal-to 0.25) epilayers on GaAs are presented for the first time, together with spectra of relaxed layers of the same compositions. Critical point energies, obtained by line-shape fitting to second-derivative spectroscopic ellipsometry (SE) data, show an increase in the E1, E1 + DELTA-1 splitting with strain, in agreement with theory using GaAs deformation potentials. SE is shown to be capable of determining layer thickness, composition, and strain in this alloy system.

引用

页码：2412 / 2414

页数：3

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