SPECTROSCOPIC ELLIPSOMETRY OF E1-LIKE TRANSITIONS IN NANOMETER-THICKNESS GE LAYERS

被引：26

作者：

FREEOUF, JL

TSANG, JC

LEGOUES, FK

IYER, SS

机构：

[1] IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.64.315

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spectroscopic ellipsometry of epitaxial Ge in bulk Si(100) has been used to study the effects of strain and layer thickness on the Ge-derived E1 transitions. Although a 4-AI-Ge layer exhibits no Ge-like E1 structure, localized E1-like transitions are observed for 7-AI-Ge layers showing the E1 transition is a robust probe of the Ge-like behavior in ultrathin layers. © 1990 The American Physical Society.

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页码：315 / 318

页数：4

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