STUDY OF STACKING-FAULTS DURING CMOS PROCESSING - ORIGIN, ELIMINATION AND CONTRIBUTION TO LEAKAGE

被引：30

作者：

MURARKA, SP

SEIDEL, TE

DALTON, JV

DISHMAN, JM

READ, MH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期

关键词：

D O I：

10.1149/1.2129739

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：716 / 724

页数：9

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