CALCULATION OF CONCENTRATION PROFILES AND SURFACE CONCENTRATION FROM SHEET-CONDUCTANCE MEASUREMENTS OF DIFFUSED LAYERS

被引：14

作者：

LAMORTE, MF

机构：

来源：

SOLID-STATE ELECTRONICS | 1960年 / 1卷 / 03期

关键词：

D O I：

10.1016/0038-1101(60)90002-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：164 / 171

页数：8

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[1] CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON
BACKENSTOSS, G
[J]. PHYSICAL REVIEW, 1957, 108 (06): : 1416 - 1419
[2] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON
BACKENSTOSS, G
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710
[3] DIFFUSION OF IMPURITIES IN GERMANIUM
DUNLAP, WC
[J]. PHYSICAL REVIEW, 1954, 94 (06): : 1531 - 1540
[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS INTO GERMANIUM
FULLER, CS
[J]. PHYSICAL REVIEW, 1952, 86 (01): : 136 - 137
[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
FULLER, CS
DITZENBERGER, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553
[6] THE POTENTIALS OF INFINITE SYSTEMS OF SOURCES AND NUMERICAL SOLUTIONS OF PROBLEMS IN SEMICONDUCTOR ENGINEERING
UHLIR, A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (01): : 105 - 128