HYDROSTATIC-PRESSURE DEPENDENCIES OF DEEP IMPURITY LEVELS IN ZINCBLENDE SEMICONDUCTORS

被引：27

作者：

HONG, RD

JENKINS, DW

REN, SY

DOW, JD

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.38.12549

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12549 / 12555

页数：7

共 34 条

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