EXPERIMENTAL-DETERMINATION OF THE DENSITY OF GAP STATES IN AMORPHOUS-SILICON BY SCHOTTKY-BARRIER ADMITTANCE

被引：3

作者：

ARCHIBALD, IW

ABRAM, RA

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 56卷 / 04期

关键词：

D O I：

10.1080/13642818708221329

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：429 / 441

页数：13

共 17 条

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[10] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

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