DETERMINATION OF THE GALNP ALGALNP BAND OFFSET

被引：69

作者：

LIEDENBAUM, CTHF

VALSTER, A

SEVERENS, ALGJ

THOOFT, GW

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 25期

关键词：

D O I：

10.1063/1.104193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature photoluminescence excitation spectra of disordered Ga 0.5In0.5P/Al0.3Ga0.2In 0.5P quantum wells lattice matched to (311)B GaAs substrates have been measured for the first time. Transition energies calculated with a k̄·p̄ approach agree with experiment within 3 MeV, over the entire range of quantum well thicknesses (Lz=11-109 Å). A conduction-band discontinuity of 0.65±0.05 is derived.

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页码：2698 / 2700

页数：3

相关论文

共 16 条

[1]

ALBERT C, 1972, PHYS REV B, V6, P1301

[2]

ASAMI K, 1989, SOLID STATE COMMUN, V70, P31

[3] ORGANOMETALLIC VAPOR-PHASE EPITAXY OF HIGH-QUALITY GA0.51IN0.49P AT HIGH GROWTH-RATES [J].

CAO, DS ;

KIMBALL, AW ;

CHEN, GS ;

FRY, KL ;

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) :5384-5387

[4] UNAMBIGUOUS OBSERVATION OF THE 2S STATE OF THE LIGHT-HOLE AND HEAVY-HOLE EXCITONS IN GAAS-(ALGA) AS MULTIPLE-QUANTUM-WELL STRUCTURES [J].

DAWSON, P ;

MOORE, KJ ;

DUGGAN, G ;

RALPH, HI ;

FOXON, CTB .

PHYSICAL REVIEW B, 1986, 34 (08) :6007-6010

[5]

DUGGAN G, COMMUNICATION

[6] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].

GOMYO, A ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

SUZUKI, T ;

YUASA, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :367-373

[7] GAINP/ALINP QUANTUM WELL STRUCTURES AND DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS [J].

HAYAKAWA, T ;

TAKAHASHI, K ;

HOSODA, M ;

YAMAMOTO, S ;

HIJIKATA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1553-L1555

[8] MOCVD GROWTH OF ALGAINP AT ATMOSPHERIC-PRESSURE USING TRIETHYLMETALS AND PHOSPHINE [J].

IKEDA, M ;

NAKANO, K ;

MORI, Y ;

KANEKO, K ;

WATANABE, N .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :380-385

[9]

LANDOLTBORNSTEIN, 1982, NUMERICAL DATA FUN A, V17

[10] DEPENDENCE OF PHOTOLUMINESCENCE PEAK ENERGY OF MOVPE-GROWN ALGAINP ON SUBSTRATE ORIENTATION [J].

MINAGAWA, S ;

KONDOW, M .

ELECTRONICS LETTERS, 1989, 25 (12) :758-759