SECONDARY DEFECT EVOLUTION IN ION-IMPLANTED SILICON

被引：5

作者：

GAIDUK, PI ^{[1
]}

LARSEN, AN ^{[1
]}

机构：

[1] VI LENIN STATE UNIV,INST APPL PHYS,MINSK,BELORUSSIA,USSR

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 10期

关键词：

D O I：

10.1063/1.347071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A possible correlation between the annealing of secondary defects in silicon with high P background and anomalous diffusion of As or Sb was investigated. The P background (9×1019-4×1020 cm-3) was formed by phosphorus implantation (80 keV (2-10)×1015 cm-2), followed by rapid thermal annealing. Dislocation loops and misfit dislocations of various densities were formed under these conditions. Subsequently, As or Sb was implanted, and finally the crystals were annealed by rapid thermal annealing. By a combination of Rutherford backscattering/channeling, transmission electron microscopy and Hall measurements, anomalous diffusion of Sb and As and reduction or complete annealing of the secondary defects were found in the presence of the high P background. The results are discussed in terms of interaction between impurities and dislocations or defect complexes.

引用

页码：5081 / 5089

页数：9

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