TRANSIENT PROPERTIES OF NICKEL PHTHALOCYANINE THIN-FILM TRANSISTORS

被引：29

作者：

GUILLAUD, G ^{[1
]}

SIMON, J ^{[1
]}

机构：

[1] CNRS,ESPCI,CHIM MAT MOLEC LAB,F-75231 PARIS 05,FRANCE

来源：

CHEMICAL PHYSICS LETTERS | 1994年 / 219卷 / 1-2期

关键词：

D O I：

10.1016/0009-2614(94)00050-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The transient properties of thin film transistors based on a doped insulator (nickel phthalocyanine) have been studied. A time constant of the order of 5 ms, which depends on the gate voltage, has been observed for the establishment of the source to drain current. An interpretation of this phenomenon is given.

引用

页码：123 / 126

页数：4

共 8 条

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[3]

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