EXCEPTIONALLY PRONOUNCED REDISTRIBUTION OF SILVER IN OXYGEN BOMBARDED SILICON

[1] Andersen H. H., 1981, Sputtering by particle bombardment I. Physical sputtering of single-element solids, P145

[2] IMPLICATIONS IN THE USE OF SPUTTERING FOR LAYER REMOVAL - SYSTEM AU ON SI [J]. RADIATION EFFECTS LETTERS, 1979, 43 (03): : 105 - 110

[3] PROFILE DISTORTION IN SIMS [J]. SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1984, 39 (12) : 1567 - 1571

[4] Chu W. K., 1978, BACKSCATTERING SPECT

[5] DELINE VR, 1986, SECONDARY ION MASS S, V5, P299

[6] OXYGEN-INDUCED SEGREGATION EFFECTS IN SPUTTER DEPTH-PROFILING [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 206 - 209

[7] HOW ACCURATE ARE ABSOLUTE RUTHERFORD BACKSCATTERING YIELDS [J]. NUCLEAR INSTRUMENTS & METHODS, 1979, 160 (02): : 337 - 346

[8] SCHERZER BMU, 1976, ION BEAM SURFACE LAY, V1, P33

[9] TEMPERATURE-DEPENDENCE OF PROFILE TAILING AND SEGREGATION IN SIMS ANALYSIS OF ARSENIC IN SI AND SIO2 WITH OXYGEN PRIMARY IONS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 198 - 200

[10] ION-BOMBARDMENT INDUCED INTERFACE MIXING IN THE AG-SI SYSTEM [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 107 - 114

[1] Andersen H. H., 1981, Sputtering by particle bombardment I. Physical sputtering of single-element solids, P145

[2] IMPLICATIONS IN THE USE OF SPUTTERING FOR LAYER REMOVAL - SYSTEM AU ON SI [J]. RADIATION EFFECTS LETTERS, 1979, 43 (03): : 105 - 110

[3] PROFILE DISTORTION IN SIMS [J]. SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1984, 39 (12) : 1567 - 1571

[4] Chu W. K., 1978, BACKSCATTERING SPECT

[5] DELINE VR, 1986, SECONDARY ION MASS S, V5, P299

[6] OXYGEN-INDUCED SEGREGATION EFFECTS IN SPUTTER DEPTH-PROFILING [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 206 - 209

[7] HOW ACCURATE ARE ABSOLUTE RUTHERFORD BACKSCATTERING YIELDS [J]. NUCLEAR INSTRUMENTS & METHODS, 1979, 160 (02): : 337 - 346

[8] SCHERZER BMU, 1976, ION BEAM SURFACE LAY, V1, P33

[9] TEMPERATURE-DEPENDENCE OF PROFILE TAILING AND SEGREGATION IN SIMS ANALYSIS OF ARSENIC IN SI AND SIO2 WITH OXYGEN PRIMARY IONS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 198 - 200

[10] ION-BOMBARDMENT INDUCED INTERFACE MIXING IN THE AG-SI SYSTEM [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 107 - 114