RAPID ANNEALING IN SILICON TRANSISTORS

被引:8
作者
BINDER, D
BUTCHER, DT
CREPPS, JR
HAMMER, EL
机构
关键词
D O I
10.1109/TNS.1968.4325035
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:84 / +
页数:1
相关论文
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SANDER, HH .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :116-+
[3]  
HOLMES DK, 1962, RADIAT DAMAGE SOLIDS, P3
[4]  
MARGENAU H, MATHEMATICS PHYSICS, P236
[5]   TRANSIENT ANNEALING IN SEMICONDUCTOR DEVICES FOLLOWING PULSED NEUTRON IRRADIATION [J].
SANDER, HH ;
GREGORY, BL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :53-+
[6]  
SANDER HH, 1964, SCR64192 SAND LAB AL
[7]  
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