C-MOS-SOS LSI INPUT-OUTPUT PROTECTION NETWORKS

被引：5

作者：

AHLPORT, BT ^{[1
]}

CRICCHI, JR ^{[1
]}

BARTH, DA ^{[1
]}

机构：

[1] WESTINGHOUSE ELECT CORP,BALTIMORE,MD 21203

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 08期

关键词：

D O I：

10.1109/T-ED.1978.19204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved input and output electrical surge protection has been developed for C-MOS and MNOS large-scale integrated circuitry fabricated on sapphire. The failure mode was designed to be the input-or output-series limiting diffused resistor, which can be controlled reliably through the fabrication processes. Forward-bias diodes attenuate the overvoltage surges. Failure energies and voltages have Been evaluated, and design equations are developed and verified. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：933 / 938

页数：6

共 11 条

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