FILAMENTATION IN SILICON-ON-SAPPHIRE HOMOGENEOUS THIN-FILMS

被引：15

作者：

PONTIUS, DH ^{[1
]}

SMITH, WB ^{[1
]}

BUDENSTEIN, PP ^{[1
]}

机构：

[1] AUBURN UNIV, AUBURN, AL 36830 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.1661883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：331 / 340

页数：10

共 19 条

[1] THERMAL FILAMENTS IN VANADIUM DIOXIDE [J].

BERGLUND, CN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :432-+

[2]

BOER KW, 1970, J APPL PHYS, V41, P2675, DOI 10.1063/1.1659281

[3] FIELD INHOMOGENEITIES IN CDS SINGLE CRYSTALS [J].

BOER, KW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :123-128

[4] DESTRUCTIVE BREAKDOWN IN THIN FILMS OF SIO MGF2 CAF2 CEF3 CEO2 AND TEFLON [J].

BUDENSTEIN, PP ;

HAYES, PJ ;

SMITH, JL ;

SMITH, WB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (02) :289-+

[5]

BUDENSTEIN PP, RGTR7215 US ARM MISS

[6] THERMAL INSTABILITY IN VERY SMALL P-N JUNCTIONS [J].

CHIANG, KL ;

LAURITZEN, PO .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) :782-+

[7] AVALANCHE-INDUCED NEGATIVE RESISTANCE IN THIN OXIDE FILMS [J].

CHOPRA, KL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :184-&

[8] EMISSION OF VISIBLE RADIATION FROM EXTENDED PLASMAS IN SILICON DIODES DURING SECOND BREAKDOWN [J].

DUMIN, DJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :479-+

[9] THERMAL EFFECTS CONNECTED WITH SWITCHING IN AMORPHOUS SEMICONDUCTING CHALCOGENIDE FILMS [J].

GUNTERSD.M .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2566-&

[10] THERMAL BREAKDOWN IN SILICON P-N JUNCTION DEVICES [J].

KHURANA, BS ;

SUGANO, T ;

YANAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) :763-&

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