THERMAL BREAKDOWN IN SILICON P-N JUNCTION DEVICES

[1] EGAWA H, AVALANCHE CHARACTERI, P755

[2] EGAWA H, PRIVATE COMMUNICATIO

[3] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +

[4] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .2. CLASSIFICATION OF WEAK SPOTS IN DIFFUSED P-N JUNCTIONS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (10) : 1822 - 1831

[5] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1. [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) : 835 - 848

[6] Runyan W.R., 1965, SILICON SEMICONDUCTO

[7] THORNTON CG, 1958, IRE T, VED 5, P6

[8] BARRIER TEMPERATURE AT TURNOVER IN GERMANIUM PARA-NORMAL JUNCTION [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1959, 14 (02) : 232 - 233

[1] EGAWA H, AVALANCHE CHARACTERI, P755

[2] EGAWA H, PRIVATE COMMUNICATIO

[3] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +

[4] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .2. CLASSIFICATION OF WEAK SPOTS IN DIFFUSED P-N JUNCTIONS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (10) : 1822 - 1831

[5] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1. [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) : 835 - 848

[6] Runyan W.R., 1965, SILICON SEMICONDUCTO

[7] THORNTON CG, 1958, IRE T, VED 5, P6

[8] BARRIER TEMPERATURE AT TURNOVER IN GERMANIUM PARA-NORMAL JUNCTION [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1959, 14 (02) : 232 - 233